JPS6141145B2 - - Google Patents

Info

Publication number
JPS6141145B2
JPS6141145B2 JP52024489A JP2448977A JPS6141145B2 JP S6141145 B2 JPS6141145 B2 JP S6141145B2 JP 52024489 A JP52024489 A JP 52024489A JP 2448977 A JP2448977 A JP 2448977A JP S6141145 B2 JPS6141145 B2 JP S6141145B2
Authority
JP
Japan
Prior art keywords
semiconductor region
region
base region
gto
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52024489A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53110386A (en
Inventor
Minoru Azuma
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2448977A priority Critical patent/JPS53110386A/ja
Priority to DE2719219A priority patent/DE2719219C2/de
Publication of JPS53110386A publication Critical patent/JPS53110386A/ja
Priority to US06/058,128 priority patent/US4243999A/en
Publication of JPS6141145B2 publication Critical patent/JPS6141145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/241—Asymmetrical thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)
JP2448977A 1977-03-08 1977-03-08 Semiconductor device Granted JPS53110386A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2448977A JPS53110386A (en) 1977-03-08 1977-03-08 Semiconductor device
DE2719219A DE2719219C2 (de) 1977-03-08 1977-04-29 Mit Hilfe einer Steuerelektrode abschaltbare Thyristortriode
US06/058,128 US4243999A (en) 1977-03-08 1979-07-16 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2448977A JPS53110386A (en) 1977-03-08 1977-03-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53110386A JPS53110386A (en) 1978-09-27
JPS6141145B2 true JPS6141145B2 (en]) 1986-09-12

Family

ID=12139589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2448977A Granted JPS53110386A (en) 1977-03-08 1977-03-08 Semiconductor device

Country Status (3)

Country Link
US (1) US4243999A (en])
JP (1) JPS53110386A (en])
DE (1) DE2719219C2 (en])

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
EP0064613B1 (en) * 1981-04-30 1986-10-29 Kabushiki Kaisha Toshiba Semiconductor device having a plurality of element units operable in parallel
JPS58121672A (ja) * 1982-01-12 1983-07-20 Fuji Electric Corp Res & Dev Ltd サイリスタの製造方法
DE3468787D1 (en) * 1983-03-31 1988-02-18 Bbc Brown Boveri & Cie Semiconductor power device and method of manufacture
US4801554A (en) * 1983-03-31 1989-01-31 Bbc Brown, Boveri & Company, Limited Process for manufacturing a power semiconductor component
US5212396A (en) * 1983-11-30 1993-05-18 Kabushiki Kaisha Toshiba Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
EP0325774B1 (de) * 1988-01-27 1992-03-18 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb
DE19746974A1 (de) * 1997-10-24 1999-04-29 Asea Brown Boveri Abschaltthyristor mit Stopschicht
EP1746661A1 (en) * 2005-07-22 2007-01-24 ABB Technology AG Power semiconductor device
CN101901832B (zh) * 2010-06-28 2012-05-23 启东吉莱电子有限公司 一种镓扩散形成可控硅穿通结构的生产方法
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
CN108878523B (zh) * 2018-07-11 2021-06-15 北京优捷敏半导体技术有限公司 一种碳化硅门极可关断晶闸管及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1934866A1 (de) * 1968-08-05 1970-05-14 Rca Corp Halbleiterbauelement
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1981 *

Also Published As

Publication number Publication date
JPS53110386A (en) 1978-09-27
DE2719219C2 (de) 1983-07-28
DE2719219A1 (de) 1978-09-14
US4243999A (en) 1981-01-06

Similar Documents

Publication Publication Date Title
US4450467A (en) Gate turn-off thyristor with selective anode penetrating shorts
US4060821A (en) Field controlled thyristor with buried grid
US4646117A (en) Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions
JPS6141145B2 (en])
JPH04146674A (ja) 半導体装置及びその製造方法
GB945249A (en) Improvements in semiconductor devices
US4454527A (en) Thyristor having controllable emitter short circuits and a method for its operation
US3239728A (en) Semiconductor switch
EP0014098A2 (en) Gate turn-off thyristor
US3280386A (en) Semiconductor a.c. switch device
US4782379A (en) Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4132996A (en) Electric field-controlled semiconductor device
JP3165480B2 (ja) ターンオフサイリスタ
US3234441A (en) Junction transistor
US5874751A (en) Insulated gate thyristor
US3324359A (en) Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction
JPH0117268B2 (en])
US4500902A (en) FET Controlled thyristor
JPH02122671A (ja) 制御可能なパワー半導体素子
JPH0793422B2 (ja) 半導体装置
US3411054A (en) Semiconductor switching device
EP0144654A2 (en) Semiconductor device structure including a dielectrically-isolated insulated-gate transistor
EP0064614B1 (en) Improved emitter structure for semiconductor devices
JPH0126549B2 (en])
US3331000A (en) Gate turn off semiconductor switch having a composite gate region with different impurity concentrations